2SK3919-ZK-E2-AY Renesas Electronics America, 2SK3919-ZK-E2-AY Datasheet - Page 5

• Manufacturer Part Number: 2SK3919-ZK-E2-AY
• Description: MOSFET N-CH 25V MP-3ZK/TO-252
• Manufacturer: Renesas Electronics America

Specifications of 2SK3919-ZK-E2-AY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.6 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 64A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
1000
120
100
100
0.1
80
60
40
20
10
0
1
0.1
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
T
Single pulse
I
D(DC)
(at V
C
R
DS(on)
= 25°C
25
GS
V
DS
Limited
= 10 V)
T
Power Dissipation Limited
C
I
- Drain to Source Voltage - V
D(pulse)
1000
0.01
50
- Case Temperature - °C
100
0.1
10
1
1
100
75
µ
100
1 m
PW = 100 µs
10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
125
A
= 25°C)
150
1 ms
10 ms
10 m
Data Sheet D17078EJ4V0DS
175
100
PW - Pulse Width - s
100 m
1
40
35
30
25
20
15
10
5
0
0
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25
R
R
th(ch-C)
th(ch-A)
T
C
- Case Temperature - °C
50
Single pulse
= 3.47°C/W
100
= 125°C/W
75
100
1000
125 150
2SK3919
175
3