IPD50N03S2L-06 Infineon Technologies, IPD50N03S2L-06 Datasheet - Page 4

• Manufacturer Part Number: IPD50N03S2L-06
• Description: MOSFET N-CH 30V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD50N03S2L-06

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 85µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.4 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 1.2 V
• Continuous Drain Current: 50 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000254461

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
160
140
120
100
100
80
60
40
20
10
0
1
DS
0.1
0
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
T
V
C
100
DS
[°C]
[V]
10
1 ms
150
100 µs
10 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
60
50
40
30
20
10
10
10
10
= f(t
10
0
-1
-2
-3
0
C
0
10
); V
p
-7
0.01
0.05
)
0.1
0.5
GS
10
≥ 10 V
p
-6
/T
50
single pulse
10
-5
10
T
t
C
-4
100
p
[°C]
[s]
10
-3
IPD50N03S2L-06
10
150
-2
10
2006-07-18
-1
200
10
0