IPD30N06S2L-23 Infineon Technologies, IPD30N06S2L-23 Datasheet - Page 5

• Manufacturer Part Number: IPD30N06S2L-23
• Description: MOSFET N-CH 55V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N06S2L-23

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 50µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1091pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 1.2 V
• Continuous Drain Current: 30 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000252168

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
DS
0
GS
1
); T
); V
GS
j
j
DS
= 25 °C
10 V
= 6V
1
5 V
2
4.5 V
2
V
V
GS
DS
3
[V]
[V]
-55 °C
3
25 °C 175 °C
3.5 V
3 V
2.5 V
4 V
4
4
page 5
5
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
70
60
50
40
30
20
10
40
30
20
10
0
= (I
D
0
0
); T
3 V
D
); T
j
= 25°C
fs
GS
10
10
j
= 25 °C
20
20
3.5 V
I
I
D
D
30
[A]
[A]
30
IPD30N06S2L-23
40
4.5 V
10 V
5 V
4 V
40
50
2006-07-18
50
60