BSO613SPV G Infineon Technologies, BSO613SPV G Datasheet - Page 5

• Manufacturer Part Number: BSO613SPV G
• Description: MOSFET P-CH 60V 3.44A DSO-8
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO613SPV G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.44A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.44 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO613SPVGT; BSO613SPVGXT; SP000216309

Power Dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
Rev.1.3
tot
= f ( V
-10
-10
-10
-10
-10
W
A
= f (
2.8
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-1
-2
2
1
0
-10
0
BSO613SPV
BSO613SPV
T
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
120
1
°C
DC
V
T
V
t p = 550.0µs
A
DS
160
1 ms
10 ms
-10
Page 5
2
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f (
10
10
10
-3.8
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
10
10
10
A
0.0
-1
-2
-3
= f ( t
2
1
0
10
T
0
A
BSO613SPV
BSO613SPV
-5
)
20
p
10
single pulse
)
-4
GS
40
10
³
-3
p
10 V
/ T
60
10
-2
80
10
-1
100
10
BSO613SPV G
0
120
2007-03-02
10
D = 0.50
1
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
s
A
160
10
3