IPD35N10S3L-26 Infineon Technologies, IPD35N10S3L-26 Datasheet

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IPD35N10S3L-26

Manufacturer Part Number
IPD35N10S3L-26
Description
MOSFET N-CH 100V 35A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD35N10S3L-26

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
2.4V @ 39µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
2700pF @ 25V
Power - Max
71W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000386184

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD35N10S3L-26
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD35N10S3L-26
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPD35N10S3L-26
0
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD35N10S3L-26
®
-T Power-Transistor
1)
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
3N10L26
stg
T
T
T
I
T
D
C
C
C
C
=17A
page 1
=25°C, V
=100°C, V
=25°C
=25°C
Conditions
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
=10V
1)
-55 ... +175
55/175/56
Value
120
175
±20
35
25
35
71
PG-TO252-3-11
IPD35N10S3L-26
100
26
35
2008-04-21
Unit
A
mJ
A
V
W
°C
V
m
A

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IPD35N10S3L-26 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary Marking 3N10L26 Symbol Conditions I T =25° =100° =25°C D,pulse =17A =25°C tot stg page 1 IPD35N10S3L-26 DS DS(on),max D PG-TO252-3-11 Value =10V =10V 120 175 35 ±20 71 -55 ... +175 55/175/56 100 Unit °C 2008-04-21 ...

Page 2

... V V =0V 1mA (BR)DSS =39µA GS(th =80V, V =0V DSS T =25° =80V, V =0V =125° =20V, V =0V GSS =4.5V, I =35A DS( page 2 IPD35N10S3L-26 Values min. typ. max 2 100 - - 1.2 1.7 2.4 - 0.01 0 100 - 24.5 31.9 - 20.0 24.0 2008-04-21 Unit K/W V µ ...

Page 3

... Symbol Conditions C iss V =0V, V =25V oss f =1MHz C rss t d(on =20V =35A d(off =80V, I =35A 10V plateau =25° S,pulse V =0V, I =35A =25° =50V /dt =100A/µ page 3 IPD35N10S3L-26 Values min. typ. max. - 2070 2700 - 460 - =10V 3 0 150 Unit pF 600 140 1 2008-04-21 ...

Page 4

... parameter 1000 100 Rev. 1.0 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µ 100 µ 100 [V] page 4 IPD35N10S3L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-04-21 ...

Page 5

... V GS 140 10 V 120 100 Typ. transfer characteristics parameter °C 175 ° Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 4 3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on -55 ° [V] page 5 IPD35N10S3L- ° 3 [ -60 - 100 T [° 140 180 2008-04-21 ...

Page 6

... Rev. 1.0 10 Typ. capacitances 200 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 °C 25 °C 0.1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPD35N10S3L- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-04-21 ...

Page 7

... A 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD35N10S3L- -55 - 105 T [° 145 Q gate 2008-04-21 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD35N10S3L-26 2008-04-21 ...

Page 9

... Revision History Version Rev. 1.0 Date page 9 IPD35N10S3L-26 Changes 2008-04-21 ...

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