AO4447 Alpha & Omega Semiconductor Inc, AO4447 Datasheet
AO4447
Specifications of AO4447
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AO4447 Summary of contents
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... General Description The AO4447/L uses advanced trench technology to provide excellent R , and ultra-low low gate DS(ON) charge. This device is suitable for use as a load switch. The device is ESD protected. AO4447 and AO4447L are electrically identical. -RoHS Compliant -AO4447L is Halogen Free SOIC-8 Top View ...
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... AO4447 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4447 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -10V -3. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd - =-2. 1.6 1.4 1 =-10V GS 0.8 0 -50 Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ...
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... AO4447 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-15A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1s 1.0 10s T =150°C J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA J, =40°C/W θ ...