NDF04N60ZG ON Semiconductor, NDF04N60ZG Datasheet - Page 5

• Manufacturer Part Number: NDF04N60ZG
• Description: MOSFET N-CH 600V 4A TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF04N60ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Gate Charge Qg: 19 nC
• Forward Transconductance Gfs (max / Min): 3.3 S
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 28 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.001
0.01
0.01
1.0
0.1
1.0
0.1
10
10
0.000001
0.000001
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
20%
10%
SINGLE PULSE
SINGLE PULSE
0.00001
0.00001
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.0001
0.0001
Figure 14. Thermal Impedance for NDD04N60Z
Figure 15. Mounting Position for Isolation Test
Figure 13. Thermal Impedance for NDF04N60Z
TYPICAL CHARACTERISTICS
0.001
0.001
http://onsemi.com
0.01
0.01
PULSE TIME (s)
PULSE TIME (s)
5
HEATSINK
0.110″ MIN
LEADS
0.1
0.1
1.0
1.0
10
10
R
Steady State
R
Steady State
qJC
qJC
100
100
= 4.4°C/W
= 1.5°C/W
1000
1000