NDF04N60ZG ON Semiconductor, NDF04N60ZG Datasheet - Page 5
![MOSFET N-CH 600V 4A TO-220FP](/photos/5/32/53231/switchmode_to-220-3fullpack_sml.jpg)
NDF04N60ZG
Manufacturer Part Number
NDF04N60ZG
Description
MOSFET N-CH 600V 4A TO-220FP
Manufacturer
ON Semiconductor
Datasheet
1.NDF04N60ZG.pdf
(9 pages)
Specifications of NDF04N60ZG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
535pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.8 Ohms
Gate Charge Qg
19 nC
Forward Transconductance Gfs (max / Min)
3.3 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
4.4 A
Power Dissipation
28 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
0.001
0.001
0.01
0.01
1.0
0.1
1.0
0.1
10
10
0.000001
0.000001
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
20%
10%
SINGLE PULSE
SINGLE PULSE
0.00001
0.00001
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.0001
0.0001
Figure 14. Thermal Impedance for NDD04N60Z
Figure 15. Mounting Position for Isolation Test
Figure 13. Thermal Impedance for NDF04N60Z
TYPICAL CHARACTERISTICS
0.001
0.001
http://onsemi.com
0.01
0.01
PULSE TIME (s)
PULSE TIME (s)
5
HEATSINK
0.110″ MIN
LEADS
0.1
0.1
1.0
1.0
10
10
R
Steady State
R
Steady State
qJC
qJC
100
100
= 4.4°C/W
= 1.5°C/W
1000
1000