NDF04N60ZG ON Semiconductor, NDF04N60ZG Datasheet - Page 8
![MOSFET N-CH 600V 4A TO-220FP](/photos/5/32/53231/switchmode_to-220-3fullpack_sml.jpg)
NDF04N60ZG
Manufacturer Part Number
NDF04N60ZG
Description
MOSFET N-CH 600V 4A TO-220FP
Manufacturer
ON Semiconductor
Datasheet
1.NDF04N60ZG.pdf
(9 pages)
Specifications of NDF04N60ZG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
535pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.8 Ohms
Gate Charge Qg
19 nC
Forward Transconductance Gfs (max / Min)
3.3 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
4.4 A
Power Dissipation
28 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
SEATING
PLANE
−T−
V
S
F
1
G
B
R
4
2
3
A
K
D
0.13 (0.005)
3 PL
J
M
T
C
PACKAGE DIMENSIONS
E
H
http://onsemi.com
CASE 369D−01
ISSUE B
IPAK
8
Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
ANSI Y14.5M, 1982.
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
V
F
J
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
MIN
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
MAX
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MIN
2.29 BSC
MAX
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
−−−