BSP149 L6327 Infineon Technologies, BSP149 L6327 Datasheet - Page 6

• Manufacturer Part Number: BSP149 L6327
• Description: MOSFET N-CH 200V 660MA SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP149 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1V @ 400µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 430pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.66 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP149 L6327; BSP149L6327INTR; BSP149L6327XT; SP000089214

Rev. 1.2
9 Drain-source on-state resistance
R
11 Threshold voltage bands
I
D
DS(on)
=f(V
0.01
0.1
10
8
6
4
2
0
GS
1
=f(T
-60
-2
); V
j
); I
DS
-20
D
=3 V; T
=0.07 A; V
N
20
-1.5
%98
j
=25 °C
M
V
GS
T
GS
j
L
60
[V]
=0 V
[°C]
typ
K
100
-1
J
140
400 µA
-0.5
180
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typ. capacitances
C =f(V
GS(th)
-0.5
-1.5
-2.5
=f(T
-1
-2
-3
DS
0
-60
1000
); V
100
10
j
); V
D
GS
0
=-3 V; f =1 MHz
-20
DS
=3 V; I
20
D
=400 µA
10
T
j
V
60
[°C]
DS
%98
typ
%2
[V]
100
20
140
2005-11-28
BSP149
Ciss
Crss
Coss
180
30