BSC060P03NS3E G Infineon Technologies, BSC060P03NS3E G Datasheet - Page 9
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSC060P03NS3E G
Manufacturer Part Number
BSC060P03NS3E G
Description
MOSFET P-CH 30V 17.7A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC060P03NS3E_G.pdf
(9 pages)
Specifications of BSC060P03NS3E G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17.7A
Vgs(th) (max) @ Id
1.9V @ 150µA
Gate Charge (qg) @ Vgs
81nC @ 10V
Input Capacitance (ciss) @ Vds
6020pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-TSDSON
Package
SuperSO8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
6.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant