IPD80P03P4L-07 Infineon Technologies, IPD80P03P4L-07 Datasheet

no-image

IPD80P03P4L-07

Manufacturer Part Number
IPD80P03P4L-07
Description
MOSFET P-CH 30V 80A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD80P03P4L-07

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 130µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
5700pF @ 25V
Power - Max
88W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD80P03P4L-07
IPD80P03P4L-07INTR
SP000396296

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD80P03P4L-07
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD80P03P4L-07
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPD80P03P4L-07
Quantity:
563
Rev. 1.0
OptiMOS
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD80P03P4L-07
®
-P2 Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4P03L07
stg
T
V
T
V
T
I
-
-
T
-
-
D
C
C
C
C
GS
GS
=-40A
page 1
=25°C,
=100°C,
=25°C
=25 °C
=-10V
=-10V
Conditions
1)
2)
Product Summary
V
R
I
D
DS
DS(on)
-55 ... +175
55/175/56
+5/-16
Value
-320
135
-80
-65
-80
88
IPD80P03P4L-07
PG-TO252-3-11
-30
-80
6.8
2008-07-30
Unit
A
mJ
A
V
W
°C
V
m
A

Related parts for IPD80P03P4L-07

IPD80P03P4L-07 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary DS(on Marking 4P03L07 Symbol Conditions T =25° =-10V GS T =100° =-10V =25°C D,pulse =-40A =25 °C tot stg - - page 1 IPD80P03P4L-07 -30 V 6.8 m -80 A PG-TO252-3-11 Value Unit -80 A -65 -320 135 mJ -80 A +5/- -55 ... +175 °C 55/175/56 2008-07-30 ...

Page 2

... V V =0V -1mA (BR)DSS =-130µA GS(th =-24V DSS T =25° =-24V =125° =-16V, V GSS =-4.5V, I =-40A DS(on =-10V, I =-80A GS D page 2 IPD80P03P4L-07 Values min. typ. max 1 -30 - -1.0 -1.5 -2.0 =0V, - -0.03 -1 =0V, - -10 -100 = -100 - 8 5.6 6.8 Unit K µ 2008-07-30 ...

Page 3

... plateau =25° S,pulse V =0V, I =-80A =25° =-15V, I =-40A /dt =-100A/µ 1.7K/W the chip is able to carry 92A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPD80P03P4L-07 Values Unit min. typ. max. - 4400 5700 pF - 1220 1600 - -3.7 ...

Page 4

... parameter 1000 100 Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPD80P03P4L- ≤ - 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-07-30 ...

Page 5

... Typ. transfer characteristics parameter 320 240 160 Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 4. 3. [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 9 -55 °C 25 °C 8 175 ° - [V] page 5 IPD80P03P4L- ° -4V -4. 160 240 - 100 T [°C] j -5V -10V 320 140 180 2008-07-30 ...

Page 6

... SD Rev. 1.0 10 Typ. capacitances 1300µ 100 140 180 12 Avalanche characteristics I = f(t AS parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPD80P03P4L- MHz [ j(start) 25°C 100°C 150° 100 t [µs] AV Ciss Coss Crss 25 30 1000 2008-07-30 ...

Page 7

... AS j parameter 300 20 A 250 200 150 40 A 100 [° Typ. gate charge -80 A pulsed GS gate D parameter gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms -24V - [nC] page 7 IPD80P03P4L- -60 - 100 T [° 140 180 gate gate 2008-07-30 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD80P03P4L-07 2008-07-30 ...

Page 9

... Revision History Version Rev. 1.0 Date page 9 IPD80P03P4L-07 Changes 2008-07-30 ...

Related keywords