NDD05N50Z-1G ON Semiconductor, NDD05N50Z-1G Datasheet

NDD05N50Z-1G

Manufacturer Part Number

NDD05N50Z-1G

Description

MOSFET N-CH 500V 5A IPAK

Manufacturer

ON Semiconductor

Datasheets

1.NDD05N50Z-1G.pdf (9 pages)

2.NDD05N50Z-1G.pdf (10 pages)

Specifications of NDD05N50Z-1G

Package / Case

IPak, TO-251, DPak, VPak (3 straight leads + tab)

Mounting Type

Through Hole

Power - Max

83W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

18.5nC @ 10V

Vgs(th) (max) @ Id

4.5V @ 50µA

Current - Continuous Drain (id) @ 25° C

4.7A

Drain To Source Voltage (vdss)

500V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.5 Ohm @ 2.2A, 10V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NDD05N50Z-1G

Manufacturer:

Quantity:

3 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NDD05N50Z-1G

Manufacturer:

ON Semiconductor

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NDD05N50Z-1G

Manufacturer:

Quantity:

12 500

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NDF05N50Z, NDP05N50Z,

NDD05N50Z

N-Channel Power MOSFET

500 V, 1.25 W

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

2. I

ABSOLUTE MAXIMUM RATINGS

December, 2009 − Rev. 0

Drain−to−Source Voltage

Continuous Drain Current R

Continuous Drain Current

Pulsed Drain Current, V

10 V

Power Dissipation R

Gate−to−Source Voltage

Single Pulse Avalanche Energy,

ESD (HBM) (JESD22−A114)

RMS Isolation Voltage (t =

0.3 sec., R.H. ≤ 30%, T

25°C) (Figure 15)

Peak Diode Recovery

Continuous Source Current

(Body Diode)

Maximum Temperature for

Soldering Leads, 0.063″

(1.6 mm) from Case for 10 s

Package Body for 10 s

Operating Junction and

Storage Temperature Range

Low ON Resistance

Low Gate Charge

100% Avalanche Tested

These Devices are Pb−Free and are RoHS Compliant

qJC

= 5.0 A

= 4.4 A, di/dt ≤ 100 A/ms, V

, T

= 100°C

Rating

qJC

Symbol

≤ BV

dv/dt

PKG

, T

DSS

esd

ISO

DSS

stg

= 25°C unless otherwise noted)

, T

(Note 1)

4500

NDF

= +150°C

3.2

4.5 (Note 2)

−55 to 150

3000

500

±30

130

300

260

NDP

3.2

NDD

4.7

V/ns

Unit

°C

CASE 221D

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

TO−220FP

MARKING AND ORDERING INFORMATION

STYLE 1

500 V

DSS

G (1)

CASE 221A

TO−220AB

STYLE 5

http://onsemi.com

N−Channel

CASE 369D

Publication Order Number:

D (2)

STYLE 2

DS(on)

IPAK

S (3)

1.25 W

(TYP) @ 2.2 A

NDF05N50Z/D

CASE 369AA

1 2

STYLE 2

DPAK

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