NDD05N50Z-1G ON Semiconductor, NDD05N50Z-1G Datasheet - Page 4

• Manufacturer Part Number: NDD05N50Z-1G
• Description: MOSFET N-CH 500V 5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD05N50Z-1G

• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Mounting Type: Through Hole
• Power - Max: 83W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 18.5nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1200
1000
1000
1100
900
800
700
600
500
400
300
200
100
100
1.0
10
0
0
1
V
Figure 9. Resistive Switching Time Variation
C
V
DD
rss
GS
I
D
5
= 250 V
= 5 A
= 10 V
V
DS
Figure 7. Capacitance Variation
10
, DRAIN−TO−SOURCE VOLTAGE (V)
C
R
versus Gate Resistance
oss
G
15
, GATE RESISTANCE (W)
C
iss
20
0.01
25
10
100
0.1
10
1
0.1
30
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
C
GS
= 25°C
35
v 30 V
V
TYPICAL CHARACTERISTICS
Safe Operating Area NDD05N50Z
DS
T
V
f = 1 MHz
, DRAIN−TO−SOURCE VOLTAGE (V)
40
J
GS
1
= 25°C
= 0 V
t
t
t
http://onsemi.com
d(off)
t
d(on)
f
45
r
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
100
50
10 ms
15.0
14.0
13.0
12.0
10.0
4
11.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
LIMIT
1 ms
100
0
100 ms
1.0
0.1
10
dc
Drain−to−Source Voltage versus Total Charge
Q
0.3
GS
2
Figure 8. Gate−to−Source Voltage and
Figure 10. Diode Forward Voltage versus
10 ms
100
0.4
4
T
V
J
Q
SD
V
= 150°C
g
DS
, TOTAL GATE CHARGE (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
0.5
6
125°C
8
0.6
1000
Q
Q
GD
T
Current
10
25°C
0.7
12
−55°C
0.8
14
0.9
V
V
T
DS
I
GS
J
16
D
= 25°C
= 250 V
= 5 A
1.0
18
1.1
20
300
250
200
150
100
50
0
1.2