NDD04N60Z-1G ON Semiconductor, NDD04N60Z-1G Datasheet - Page 3

• Manufacturer Part Number: NDD04N60Z-1G
• Description: MOSFET N-CH 600V 4A IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD04N60Z-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 83 W
• Forward Transconductance Gfs (max / Min): 3.3 S
• Gate Charge Qg: 19 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.5
2.5
1.5
2.6
1.4
0.8
0.2
8
6
4
2
0
3
2
1
2
−50
0
5
T
I
V
J
D
Figure 3. On−Resistance vs. Gate Voltage
GS
= 25°C
= 2 A
Figure 5. On−Resistance Variation with
−25
Figure 1. On−Region Characteristics
V
= 10 V
DS
T
5
J
, DRAIN−TO−SOURCE VOLTAGE (V)
6
, JUNCTION TEMPERATURE (°C)
0
Temperature
25
10
7
V
GS
50
(V)
15
8
75
V
GS
TYPICAL CHARACTERISTICS
= 15 V
100
20
I
T
9
D
J
= 2 A
= 25°C
http://onsemi.com
125
6.4 V
6.0 V
5.8 V
6.6 V
6.2 V
5.6 V
6.8 V
10 V
7 V
25
150
10
3
10,000
1000
100
2.5
1.5
10
8
6
4
2
0
3
2
1
0.5
3
0
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
GS
J
DS
= 25°C
= 0 V
≥ 30 V
1
100
V
V
Figure 2. Transfer Characteristics
DS
GS
4
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
1.5
I
D
200
T
, DRAIN CURRENT (A)
J
= 150°C
Gate Voltage
vs. Voltage
5
V
T
T
2
GS
J
J
= 150°C
= 100°C
300
= 10 V
2.5
T
6
J
= −55°C
400
3
T
7
500
J
3.5
= 25°C
600
4
8