NDD04N60Z-1G ON Semiconductor, NDD04N60Z-1G Datasheet - Page 8

• Manufacturer Part Number: NDD04N60Z-1G
• Description: MOSFET N-CH 600V 4A IPAK
• Manufacturer: ON Semiconductor

Specifications of NDD04N60Z-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 83 W
• Forward Transconductance Gfs (max / Min): 3.3 S
• Gate Charge Qg: 19 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SEATING
PLANE
−T−
V
S
F
1
G
B
R
4
2
3
A
K
D
0.13 (0.005)
3 PL
J
M
T
C
PACKAGE DIMENSIONS
E
H
http://onsemi.com
CASE 369D−01
ISSUE B
IPAK
8
Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
ANSI Y14.5M, 1982.
STYLE 2:
DIM
PIN 1. GATE
A
B
C
D
E
G
H
K
R
S
V
F
J
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.235
0.250
0.086
0.027
0.018
0.037
0.034
0.018
0.350
0.180
0.025
0.035
0.155
MIN
0.090 BSC
INCHES
0.245
0.265
0.094
0.035
0.023
0.045
0.040
0.023
0.380
0.215
0.040
0.050
MAX
−−−
MILLIMETERS
5.97
6.35
2.19
0.69
0.46
0.94
0.87
0.46
8.89
4.45
0.63
0.89
3.93
MIN
2.29 BSC
MAX
6.35
6.73
2.38
0.88
0.58
1.14
1.01
0.58
9.65
5.45
1.01
1.27
−−−