NTR1P02LT1G ON Semiconductor, NTR1P02LT1G Datasheet - Page 4

• Manufacturer Part Number: NTR1P02LT1G
• Description: MOSFET P-CH 20V 1.3A SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR1P02LT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4V
• Input Capacitance (ciss) @ Vds: 225pF @ 5V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.3mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.22Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 1.3A
• Power Dissipation: 400mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR1P02LT1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4500
4000
3500
3000
2500
2000
1500
1000
100
5000
10
500
1
0
1
15
V
I
D
Figure 9. Resistive Switching Time Variation
DD
V
= −1 A
t
d(off)
DS
= −16 V
t
d(on)
10
t
= 0V
f
−V
Figure 7. Capacitance Variation
GS
versus Gate Resistance
5
R
G
, GATE RESISTANCE (W)
0
10
5
−V
t
r
DS
10
C
C
C
oss
iss
rss
15
V
T
J
GS
= 25°C
http://onsemi.com
= 0V
20
100
25
4
4
2
0
6
0.8
0.6
0.4
0.2
1.00E−01
0
0
Drain−to−Source Voltage versus Total Charge
Q
V
T
Figure 10. Diode Forward Voltage versus
J
1
GS
−V
= 25°C
= 0 V
SD
3.00E−01
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Q
G
, TOTAL GATE CHARGE (nC)
Q
2
5.00E−01
Current
Q
T
2
7.00E−01
V
I
T
D
3
J
DS
= −1.5 A
= 25°C
= −16 V
9.00E−01
4
16
12
28
24
20
8
4
0