NTR1P02LT1G ON Semiconductor, NTR1P02LT1G Datasheet - Page 5

• Manufacturer Part Number: NTR1P02LT1G
• Description: MOSFET P-CH 20V 1.3A SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTR1P02LT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 1.25V @ 250µA
• Gate Charge (qg) @ Vgs: 5.5nC @ 4V
• Input Capacitance (ciss) @ Vds: 225pF @ 5V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.3mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.22Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Drain Current (max): 1.3A
• Power Dissipation: 400mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Resistance Drain-source Rds (on): 0.22 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.3 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTR1P02LT1GOSTR

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A
A1
E
1
3
D
e
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
2
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
0.8
SOLDERING FOOTPRINT*
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
VIEW C
L1
http://onsemi.com
SOT−23 (TO−236)
L
CASE 318−08
ISSUE AN
q
0.25
5
c
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
0.079
2.0
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
STANDARD 318−08.
STYLE 21:
DIM
inches
A1
H
L1
A
b
D
E
PIN 1. GATE
c
e
L
mm
E
2. SOURCE
3. DRAIN
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
1.11
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
NTR1P02LT1/D
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX