SPD18P06P G Infineon Technologies, SPD18P06P G Datasheet - Page 8
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SPD18P06P G
Manufacturer Part Number
SPD18P06P G
Description
MOSFET P-CH 60V 18.6A TO252-3
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Specifications of SPD18P06P G
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 13.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
18.6A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
80W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18.6 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package
DPAK (TO-252)
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
130.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000443926
Avalanche energy
E
para.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
Rev 3.1
160
120
100
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
80
60
40
20
0
-60
25
D
SPD18P06P
= -18.6 A , V
= f ( T
j
45
)
-20
65
j
)
20
85
60
DD
105
= -25 V, R
100
125
145
140
°C
GS
°C
T
T
j
j
= 25
185
200
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0
SPD18P06P
4
Gate
D
0,2
= -18.6 A pulsed
8
)
V
DS max
12
16
SPD18P06P
20
SPU18P06P
24
0,8
2008-02-18
V
28
DS max
nC
Q
Gate
34