IPP80N06S2L-11 Infineon Technologies, IPP80N06S2L-11 Datasheet
IPP80N06S2L-11
Specifications of IPP80N06S2L-11
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IPP80N06S2L-11 Summary of contents
Page 1
... PG-TO220-3-1 Ordering Code SP0002-18177 SP0002-18175 SP0002-18176 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =80A =25 °C tot stg page 1 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 DS (SMD version) DS(on),max D PG-TO262-3-1 Marking 2N06L11 2N06L11 2N06L11 Value = 320 280 ±20 158 -55 ... +175 Unit °C 2010-10-26 ...
Page 2
... GS(th = DSS T =25 ° = =125 ° = GSS =4 =40 A DS( SMD version =40 A, DS( SMD version page 2 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Values min. typ. max 0. 1.2 1 100 = 100 - 10.7 14.7 - 10.4 14.4 - 8.7 11.0 - 8.4 10.7 Unit K µ mΩ 2010-10-26 ...
Page 3
... d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 0.95K/W the chip is able to carry 83A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Values min. typ. max. - 2075 = 585 - 197 - = 3 Unit - 320 1.3 V ...
Page 4
... V DS Rev. 1.1 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2010-10-26 ...
Page 5
... GS DS parameter 160 140 120 100 175 ° Rev. 1.1 6 Typ. drain-source on-state resistance DS(on) parameter 3 2 [V] 8 Typ. Forward transconductance parameter: g 150 100 50 25 °C -55 ° [V] page 5 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L- ° [ 25° 100 150 100 120 200 2010-10-26 ...
Page 6
... V = f(T GS(th) parameter: I 2.5 2 1.5 1 0.5 0 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss 2 10 Coss 1 10 Crss [V] page 6 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L- 465 µA 93 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 2010-10-26 ...
Page 7
... Typical avalanche energy parameter 80A D 300 250 200 150 100 [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.1 14 Typ. gate charge V = f(Q GS gate 125 175 16 Gate charge waveforms 100 140 180 page 7 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L- pulsed [nC] gate gate gate 2010-10- ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPP80N06S2L-11, IPI80N06S2L-11 page 8 IPB80N06S2L-11 2010-10-26 ...