IPD70N10S3L-12 Infineon Technologies, IPD70N10S3L-12 Datasheet - Page 5

• Manufacturer Part Number: IPD70N10S3L-12
• Description: MOSFET N-CH 100V 70A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD70N10S3L-12

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.5 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2.4V @ 83µA
• Gate Charge (qg) @ Vgs: 77nC @ 10V
• Input Capacitance (ciss) @ Vds: 5550pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0115 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 70 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD70N10S3L-12; IPD70N10S3L-12TR; SP000261250

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
120
250
200
150
100
80
40
50
0
0
DS
GS
0
1
); T
); V
10 V
GS
j
j
DS
= 25 °C
= 6V
1
2
5 V
4.5 V
2
V
V
GS
DS
3
[V]
[V]
3
-55 °C
4
4
25 °C
175 °C
3 V
3.5 V
4 V
page 5
5
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
35
25
15
25
20
15
10
5
5
= f(I
= f(T
-60
0
D
3 V
j
); T
); I
GS
20
-20
D
j
= 25 °C
= 70 A; V
40
20
3.5 V
60
GS
T
I
D
j
60
= 10 V
[°C]
[A]
80
IPD70N10S3L-12
100
100
4 V
140
120
2008-02-12
4.5 V
5 V
10 V
140
180