IPP084N06L3 G Infineon Technologies, IPP084N06L3 G Datasheet - Page 5

• Manufacturer Part Number: IPP084N06L3 G
• Description: MOSFET N-CH 60V 50A TO-220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP084N06L3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.2V @ 34µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4900pF @ 30V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0084 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 79 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000398080

5 Typ. output characteristics
I
7 Typ. transfer characteristics
I
200
180
160
140
120
100
120
100
V
V
80
60
40
20
80
60
40
20
0
0
0
0
T
V
V
T
1
I R
2
2
V
V
GS
DS
[V]
[V]
3
4
4
5
6
6 Typ. drain-source on resistance
R
8 Typ. forward transconductance
g
100
17
16
15
14
13
12
11
10
80
60
40
20
I
0
9
8
7
6
5
0
0
I
T
V
T
IPB081N06L3 G IPP084N06L3 G
50
50
I
I
D
D
100
[A]
[A]
100
150
150
200