IPD530N15N3 G Infineon Technologies, IPD530N15N3 G Datasheet
IPD530N15N3 G
Manufacturer Part Number
IPD530N15N3 G
Description
MOSFET N-CH 150V 21A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD530N15N3_G.pdf
(12 pages)
Specifications of IPD530N15N3 G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
53 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 35µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
887pF @ 75V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.053 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
68 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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