BSO201SP H Infineon Technologies, BSO201SP H Datasheet - Page 6

• Manufacturer Part Number: BSO201SP H
• Description: MOSFET P-CH 20V 12A 8SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO201SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9600pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 8.0 mOhm
• Rds (on) (max) (@2.5v): 12.9 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.32
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
DS
=f(T
12
11
10
4
3
9
8
7
6
5
); V
-60
0
j
); I
GS
D
=0 V; f =1 MHz
= -14.9 A; V
-20
5
20
- V
98 %
T
GS
DS
j
10
= -4.5 V
[°C]
typ
60
[V]
100
15
Coss
Ciss
Crss
140
page 6
20
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
10
10
=f(T
SD
1
0
-1
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
0.5
DS
20
; I
150 °C
D
= -250 µA
V
T
SD
j
60
[°C]
1
25 °C
[V]
150 °C, 98%
25 °C, 98%
100
BSO201SP H
1.5
140
2009-12-21
180
2