SPD30N03S2L-20 Infineon Technologies, SPD30N03S2L-20 Datasheet - Page 4

• Manufacturer Part Number: SPD30N03S2L-20
• Description: MOSFET N-CH 30V 30A DPAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPD30N03S2L-20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 23µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000013488; SPD30N03S2L20INTR; SPD30N03S2L20XT; SPD30N03S2L20XT

1 Power dissipation
P
parameter: V
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
W
A
65
55
50
45
40
35
30
25
20
15
10
5
0
3
2
1
0
10
0
SPD30N03S2L-20
SPD30N03S2L-20
DS
-1
C
20
)
)
GS
40
≥ 4 V
60
10
0
C
80
= 25 °C
100 120 140 160
10
1
t
p = 35.0µs
V
100 µs
1 ms
T
V
°C
C
DS
190
10
Page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
A
32
24
20
16
12
8
4
0
= f (t
-1
-2
-3
-4
0
1
0
10
C
SPD30N03S2L-20
SPD30N03S2L-20
)
-7
20
p
)
10
single pulse
GS
40
-6
≥ 10 V
10
p
60
/T
-5
80
10
SPD30N03S2L-20
-4
100 120 140 160
10
-3
10
2003-04-24
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0