NTMFS4898NFT3G ON Semiconductor, NTMFS4898NFT3G Datasheet

NTMFS4898NFT3G

Manufacturer Part Number

NTMFS4898NFT3G

Description

MOSFET N-CH 30V SO-8FL

Manufacturer

ON Semiconductor

Datasheet

1.NTMFS4898NFT3G.pdf (6 pages)

Specifications of NTMFS4898NFT3G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

13.2A

Vgs(th) (max) @ Id

2.5V @ 1mA

Gate Charge (qg) @ Vgs

49.5nC @ 10V

Input Capacitance (ciss) @ Vds

3233pF @ 12V

Power - Max

930mW

Mounting Type

Surface Mount

Package / Case

SO-8FL

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

3.4 mOhms

Forward Transconductance Gfs (max / Min)

77 S

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

117 A

Power Dissipation

73.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Gate Charge Qg

24.5 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTMFS4898NFT3G

Manufacturer:

Quantity:

5 000

Current page: 1 of 6
Download datasheet (140Kb)

NTMFS4898NF

Power MOSFET

30 V, 117 A, Single N−Channel, SO−8FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

June, 2010 − Rev. 2

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

10 sec

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current limited by package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (V

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Compliant

Integrated Schottky Diode

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery

DC−DC Converters

Low Side Switching

qJA

qJA,

qJA

qJC

= 39 A

(Note 1)

(Note 2)

(Note 1)

t v 10 sec

DS(on)

qJA

qJC

, L = 0.3 mH, R

= 50 V, V

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 10 V,

= 25 W)

= 25°C unless otherwise stated)

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

Dmaxpkg

dV/dt

EAS

DSS

STG

−55 to

Value

+150

22.5

16.2

2.72

36.7

26.5

7.23

13.2

0.93

84.4

73.5

±20

117

234

100

228

260

9.5

Unit

V/ns

°C

*For additional information on our Pb−Free strategy

†For information on tape and reel specifications,

NTMFS4898NFT1G

NTMFS4898NFT3G

and soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SO−8 FLAT LEAD

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 488AA

(BR)DSS

(Note: Microdot may be in either location)

30 V

STYLE 1

Device

ORDERING INFORMATION

N−CHANNEL MOSFET

http://onsemi.com

4.8 mW @ 4.5 V

3.0 mW @ 10 V

= Assembly Location

= Year

= Work Week

= Pb−Free Package

DS(ON)

(Pb−Free)

Package

SO−8FL

Publication Order Number:

MAX

MARKING

DIAGRAM

NTMFS4898NF/D

AYWWG

4898NF

Tape & Reel

Shipping

1500 /

5000 /

117 A

MAX

†

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NTMFS4898NFT3G Summary of contents

Page 1

... J T +150 STG NTMFS4898NFT1G dV/dt 6 V/ns NTMFS4898NFT3G EAS 228 mJ †For information on tape and reel specifications, including part orientation and tape sizes, please T 260 °C L refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − sec 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted on ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

V , GATE−TO−SOURCE VOLTAGE (V) GS Figure 3. On−Resistance vs. Gate−to−Source Voltage 1 1 1.6 1.5 ...

Page 5

100 GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 100 ...

Page 6

... M 3.200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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