NTMFS4898NFT3G ON Semiconductor, NTMFS4898NFT3G Datasheet - Page 4

• Manufacturer Part Number: NTMFS4898NFT3G
• Description: MOSFET N-CH 30V SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4898NFT3G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.2A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 49.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3233pF @ 12V
• Power - Max: 930mW
• Mounting Type: Surface Mount
• Package / Case: SO-8FL
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.4 mOhms
• Forward Transconductance Gfs (max / Min): 77 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 117 A
• Power Dissipation: 73.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 24.5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4500
4000
3500
3000
2500
2000
1500
1000
0.019
0.017
0.015
0.013
0.009
0.007
0.005
0.003
0.001
0.011
500
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
−50
0
3
C
Figure 3. On−Resistance vs. Gate−to−Source
C
ID = 30 A
V
rss
iss
GS
Figure 5. On−Resistance Variation with
−25
C
4
= 10 V
oss
V
4
V
DS
Figure 7. Capacitance Variation
GS
T
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (°C)
, GATE−TO−SOURCE VOLTAGE (V)
8
0
5
12
Temperature
25
Voltage
6
16
50
7
20
75
TYPICAL CHARACTERISTICS
8
V
T
24
100
J
GS
= 25°C
ID = 30 A
T
= 0 V
J
= 25°C
28
125
9
http://onsemi.com
150
32
10
4
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
0.005
0.004
0.003
0.002
0.001
10
11
9
8
7
6
5
4
3
2
1
0
0
10
5
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
Q
Drain−to−Source Voltage vs. Total Charge
GS
20
5
gs
= 0 V
V
DS
10
10
Figure 8. Gate−to−Source and
30
Q
, DRAIN−TO−SOURCE VOLTAGE (V)
g
, TOTAL GATE CHARGE (nC)
Q
I
15
D
gd
40
, DRAIN CURRENT (A)
Gate Voltage
20
15
vs. Voltage
T
T
T
50
QT
J
J
J
= 150°C
= 125°C
= 25°C
25
60
30
20
V
V
GS
70
GS
35
= 4.5 V
= 10 V
I
T
VDD = 15 V
VGS = 10 V
T
D
80
J
J
40
= 30 A
25
= 25°C
= 25°C
90
45
100
50
30