IPD60R520CP Infineon Technologies, IPD60R520CP Datasheet
IPD60R520CP
Manufacturer Part Number
IPD60R520CP
Description
MOSFET N-CH 650V 6.8A TO-252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPD60R520CP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
630pF @ 100V
Power - Max
66W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
520mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.52 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.8 A
Power Dissipation
66 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000405852
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD60R520CP
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
IPD60R520CP
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD60R520CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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IPD60R520CP Summary of contents
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