NTD2955G ON Semiconductor, NTD2955G Datasheet

NTD2955G

Manufacturer Part Number

NTD2955G

Description

MOSFET P-CH 60V 12A DPAK

Manufacturer

ON Semiconductor

Datasheet

1.NTD2955T4G.pdf (8 pages)

Specifications of NTD2955G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

180 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

12A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

750pF @ 25V

Power - Max

55W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.18 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

8 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

12 A

Power Dissipation

55000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTD2955G
NTD2955GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD2955G

Manufacturer:

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD2955G

Manufacturer:

ON SEMICONDUCTOR

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD2955G

Manufacturer:

Quantity:

12 500

Current page: 1 of 8
Download datasheet (93Kb)

NTD2955, NTD2955P

Power MOSFET

avalanche and commutation modes. Designed for low-voltage, high-

speed switching applications in power supplies, converters, and power

motor controls. These devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer an additional safety margin against unexpected

voltage transients.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 in pad size

2. When surface mounted to an FR4 board using the minimum recommended

January, 2008 - Rev. 9

-60 V, -12 A, P-Channel DPAK

MAXIMUM RATINGS

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage Temperature

Single Pulse Drain-to-Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

This Power MOSFET is designed to withstand high energy in the

to Withstand High Energy in the Avalanche and Commutation Modes

Avalanche Energy Specified

Designed for Low-Voltage, High-Speed Switching Applications and

Pb-Free Packages are Available

(Cu area = 1.127 in

pad size (Cu area = 0.412 in

DSS

- Continuous

- Non-repetitive (t

Range

Energy - Starting T

- Junction-to-Case

- Junction-to-Ambient (Note 1)

- Junction-to-Ambient (Note 2)

Purposes, 1/8 in. from case for

10 seconds

= 12 Apk, L = 3.0 mH, R

and V

= 25 Vdc, V

DS(on)

- Continuous @ T

- Single Pulse (t

Rating

Specified at Elevated Temperature

≤ 10 ms)

= 10 Vdc, Peak

= 25°C

= 25°C unless otherwise noted)

= 25°C

= 25 W)

≤ 10 ms)

= 25°C

Symbol

GSM

, T

DSS

qJC

qJA

stg

- 55 to

Value

± 20

± 25

2.73

71.4

-60

-12

-36

175

216

100

260

°C/W

Unit

Vdc

Vpk

Adc

Apk

°C

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

CASE 369C

STYLE 2

1 2

(BR)DSS

-60 V

DPAK

CASE 369D

STYLE 2

DPAK-3

ORDERING INFORMATION

Gate

155 mW @ -10 V, 6 A

http://onsemi.com

Drain

MARKING DIAGRAMS

Drain

DS(on)

= Year

= Work Week

= Pb-Free Package

P-Channel

Source

Publication Order Number:

TYP

Gate

Drain

NTD2955/D

-12 A

MAX

Source

Related parts for NTD2955G

NTD2955G Summary of contents

Page 1

NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, high- speed switching applications in power supplies, converters, and power motor controls. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note Vdc -0.25 mA (Positive Temperature Coefficient) Zero Gate Voltage Drain Current ( Vdc -60 Vdc 25°C) GS ...

Page 3

TYPICAL PERFORMANCE CURVES - 25° -9 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On-Region Characteristics 0.50 ...

Page 4

1000 iss C rss 800 600 400 200 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...

Page 5

D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 1.0E-03 NTD2955, NTD2955P P (pk DUTY CYCLE 1.0E-02 1.0E-01 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 ...

Page 6

... ORDERING INFORMATION Device NTD2955 NTD2955G NTD2955-001 NTD2955-1G NTD2955T4 NTD2955T4G NTD2955PT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD2955, NTD2955P Package DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD2955, NTD2955P PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O SEATING -T- PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2.58 ...

Page 8

... G 0.13 (0.005) *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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