IPD50R399CP Infineon Technologies, IPD50R399CP Datasheet

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IPD50R399CP

Manufacturer Part Number
IPD50R399CP
Description
MOSFET N-CH 550V 9A TO-252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPD50R399CP

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
399 mOhm @ 4.9A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
3.5V @ 330µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
890pF @ 100V
Power - Max
83W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.399 Ohm @ 10 V
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
9A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
399mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000234984

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD50R399CP
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPD50R399CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
Rev. 2.0
Features
• Lowest figure of merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC
CoolMOS CP is designed for:
• Hard and softswitching SMPS topologies
• DCM PFC for Lamp Ballast
• PWM for Lamp Ballast & PDP and LCD TV
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
CoolMOS
Type
Type
IPD50R399CP
TM
Power Transistor
2)
j
Package
Package
PG-TO252
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
Marking
5R399P
stg
T
T
T
I
I
V
static
AC (f>1 Hz)
T
D
D
C
C
C
C
DS
=3.3 A, V
=3.3 A, V
page 1
page 1
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
Product Summary
V
V
R
R
Q
Q
=50 V
=50 V
DS
DS
DS(on),max
DS(on),max
g,typ
g,typ
@T
@T
jmax
jmax
-55 ... 150
Value
0.33
215
±20
±30
3.3
20
50
83
9
6
PG-TO252
PG-TO252
IPD50R399CP
0.399
0.399
550
550
17
17
2007-11-21
2007-11-21
Unit
A
mJ
A
V/ns
V
W
°C
V
V
nC
nC

Related parts for IPD50R399CP

IPD50R399CP Summary of contents

Page 1

... D DD 2), 2), /dt =0...400 static (f>1 Hz) =25 ° tot stg page 1 page 1 IPD50R399CP @T @T 550 550 DS DS jmax jmax 0.399 0.399 DS(on),max DS(on),max g,typ g,typ PG-TO252 PG-TO252 Value 215 0.33 3.3 50 ±20 ±30 83 -55 ... 150 V V   ...

Page 2

... V V GS(th =500 DSS =25 ° =500 =150 ° = GSS DS(on) =25 ° = =4 =150 ° MHz, open drain R G page 2 page 2 IPD50R399CP Value 4 Values min. typ. max 1 260 500 500 - - - - 2 100 0.399  - 0. 2.2 - Unit A V/ns Unit K/W °C ...

Page 3

... =400 V, I =400 =4 plateau = =4 =25 ° =400 /dt =100 A/µ rrm < <T , identical low and high side switch peak (BR)DSS j jmax while V oss while V oss page 3 page 3 IPD50R399CP Values Unit min. typ. max. - 890 - 5 0.9 1 260 - ns - 1.9 - µ rising from DSS ...

Page 4

... Rev. 2.0 Rev. 2.0 2 Safe operating area =f parameter 100 100 125 125 150 150 175 175 4 Typ. output characteristics =f parameter page 4 page 4 IPD50R399CP =25 ° limited by on-state limited by on-state resistance resistance 10 µs 10 µs 100 µs 100 µ [V] [ =25 ° 4 [ µs 1 µ 5 2007-11-21 ...

Page 5

... V 0.8 0 0.7 0.7 0.6 0.6 5.5 V 5.5 V 0.5 0 0.4 0.4 4.5 V 4.5 V 0.3 0.3 0.2 0 Typ. transfer characteristics =f parameter typ 100 140 180 0 page 5 page 5 IPD50R399CP ); T =150 ° 5 [A] [ |>2 DS(on)max j 150 ° [V] GS 6 °C 10 2007-11-21 2007-11-21 ...

Page 6

... V 100 V 400 V 400 Drain-source breakdown voltage =f(T V BR(DSS) 580 560 540 520 500 480 460 440 -60 125 175 page 6 page 6 IPD50R399CP j 25 °C, 98% 25 °C, 98% 150 °C, 98% 150 °C, 98% 150 °C 150 °C 25 °C 25 ° 0.5 0 1.5 1 [V] [ =0. - 100 T [° ...

Page 7

... Crss Crss 100 100 200 200 V V [V] [ Rev. 2.0 Rev. 2.0 14 Typ. Coss stored energy = f(V E oss 300 300 400 400 500 500 0 0 page 7 page 7 IPD50R399CP ) 100 100 200 200 300 300 400 400 V V [V] [ 500 500 2007-11-21 2007-11-21 ...

Page 8

... Definition of diode switching characteristics Rev. 2.0 Rev. 2.0 page 8 page 8 IPD50R399CP 2007-11-21 2007-11-21 ...

Page 9

... PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21: Outline Rev. 2.0 Rev. 2.0 page 9 page 9 IPD50R399CP 2007-11-21 2007-11-21 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Rev. 2.0 page 10 page 10 IPD50R399CP 2007-11-21 2007-11-21 ...

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