IPD110N12N3 G Infineon Technologies, IPD110N12N3 G Datasheet

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IPD110N12N3 G

Manufacturer Part Number
IPD110N12N3 G
Description
MOSFET N-CH 120V 75A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPS110N12N3_G.pdf (10 pages)

Specifications of IPD110N12N3 G

Package / Case
DPak, TO-252 (5 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
120V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
4310pF @ 60V
Power - Max
136W
Mounting Type
Surface Mount
Gate Charge Qg
49 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 mOhms
Forward Transconductance Gfs (max / Min)
83 S, 42 S
Drain-source Breakdown Voltage
120 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPD110N12N3 G
IPD110N12N3 GTR
Features
Maximum ratings,
Parameter
Type
Package
Marking
TM
3Power-Transistor
T
R
R
Symbol Conditions
I
I
E
V
P
T T
T
T
T
I
T
R
Product Summary
V
R
I
Value
IPD110N12N3 G
IPS110N12N3 G
Unit

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IPD110N12N3 G Summary of contents

Page 1

... TM 3Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPD110N12N3 G IPS110N12N3 G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPD110N12N3 G IPS110N12N3 G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPD110N12N3 G IPS110N12N3 G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 140 120 100 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPD110N12N3 G IPS110N12N3 G 50 100 150 200 T [° [ ...

Page 5

... Typ. output characteristics 250 200 150 100 [ Typ. transfer characteristics 200 150 100 [ Typ. drain-source on resistance Typ. forward transconductance 100 IPD110N12N3 G IPS110N12N3 [ [ ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode 100 0 IPD110N12N3 G IPS110N12N3 - 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics [µ Drain-source breakdown voltage 135 130 125 120 115 110 105 -60 - [° Typ. gate charge Gate charge waveforms 100 140 180 IPD110N12N3 G IPS110N12N3 [nC] gate ate ...

Page 8

... PG-TO-251SL : Outline IPD110N12N3 G IPS110N12N3 G ...

Page 9

... PG-TO252-3: Outline IPD110N12N3 G IPS110N12N3 G ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPD110N12N3 G IPS110N12N3 G ...

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