IPP80P03P4L-04 Infineon Technologies, IPP80P03P4L-04 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
IPP80P03P4L-04
Manufacturer Part Number
IPP80P03P4L-04
Description
MOSFET P-CH 30V 80A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB80P03P4L-04.pdf
(9 pages)
Specifications of IPP80P03P4L-04
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 253µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
11300pF @ 25V
Power - Max
137W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP80P03P4L-04
Manufacturer:
TI
Quantity:
4 500
Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
320
240
160
320
240
160
80
80
0
0
DS
GS
1
0
); T
); V
GS
j
j
DS
= 25 °C; SMD
10V
1
= -6V
2
5V
2
3
-V
-V
GS
DS
-55 °C
3
[V]
[V]
4
4
25 °C
175 °C
5
5
4V
3.5V
4.5V
3V
page 5
6
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
18
15
12
9
6
3
0
6
5
4
3
2
= (I
= f(T
-60
0
D
); T
j
); I
GS
IPI80P03P4L-04, IPP80P03P4L-04
-20
j
D
= 25 °C; SMD
= -80 A; V
80
20
T
-I
GS
160
j
D
60
[°C]
[A]
= -10 V; SMD
-4V
IPB80P03P4L-04
100
240
140
2008-07-29
-10V
-4.5V
-5V
320
180