IPB80N04S2-H4 Infineon Technologies, IPB80N04S2-H4 Datasheet

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IPB80N04S2-H4

Manufacturer Part Number
IPB80N04S2-H4
Description
MOSFET N-CH 40V 80A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB80N04S2-H4.pdf (9 pages)

Specifications of IPB80N04S2-H4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
148nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000218165

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IPB80N04S2-H4
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Amily Shenzhen XNWY Technology Co., Ltd Amily Shenzhen XNWY Technology Co., Ltd
Part Number:
IPB80N04S2-H4
0
Company:
H&T Electronics H&T Electronics
Part Number:
IPB80N04S2-H4
Quantity:
294
Company:
H&T Electronics H&T Electronics
Part Number:
IPB80N04S2-H4
Quantity:
1 808
Rev. 1.1
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
• Green product (RoHS compliant)
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB80N04S2-H4
IPP80N04S2-H4
IPI80N04S2-0H4
®
Power-Transistor
2)
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
2N04H4
2N04H4
2N04H4
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=80A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
PG-TO263-3-2
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
IPP80N04S2-H4, IPI80N04S2-H4
PG-TO262-3-1
(SMD version)
-55 ... +175
55/175/56
Value
320
660
±20
300
80
80
IPB80N04S2-H4
PG-TO220-3-1
3.7
40
80
2008-02-22
Unit
A
mJ
V
W
°C
V
m
A

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IPB80N04S2-H4 Summary of contents

Page 1

... IPP80N04S2-H4, IPI80N04S2-H4 Product Summary DS(on),max I D PG-TO263-3-2 Marking 2N04H4 2N04H4 2N04H4 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =80A =25 °C tot stg page 1 IPB80N04S2- (SMD version) 3 PG-TO262-3-1 PG-TO220-3-1 Value Unit 320 660 mJ ±20 V 300 W -55 ... +175 °C 55/175/56 2008-02-22 ...

Page 2

... (BR)DSS =250 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Values min. typ. max 0 2.1 3 100 = 100 - 3.5 4.0 - 3.2 3.7 Unit K µA nA mΩ 2008-02-22 ...

Page 3

... d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ 0.5K/W the chip is able to carry 200A at 25°C. For detailed thJC page 3 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Values min. typ. max. - 4400 = 1800 - 480 - = 103 - 4 0 195 , S - 370 Unit - 148 - 320 1 2008-02-22 ...

Page 4

... V Rev. 1.1 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 100 µ 100 [V] DS page 4 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-02-22 ...

Page 5

... V GS Rev. 1.1 6 Typ. drain-source on-state resistance DS(on) parameter 5 [V] 8 Typ. Forward transconductance parameter: g 200 175 150 125 100 -55 ° [V] page 5 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- ° 5 160 240 I [ 25° 100 I [ 320 150 2008-02-22 ...

Page 6

... Typ. gate threshold voltage V = f(T GS(th) parameter 3.5 3 2.5 2 1.5 1 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss Coss 1 10 Crss [V] page 6 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- 1250 µA 250 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 ...

Page 7

... A 1000 80 A 500 [° Drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.1 14 Typ. gate charge V = f(Q GS gate 125 175 0 16 Gate charge waveforms 100 140 180 page 7 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2- pulsed 100 Q [nC] gate gate gate 2008-02- 120 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPP80N04S2-H4, IPI80N04S2-H4 page 8 IPB80N04S2-H4 2008-02-22 ...

Page 9

... Revision History Version Revision 1.1 Revision 1.1 Rev. 1.1 IPP80N04S2-H4, IPI80N04S2-H4 Date 22.02.2008 22.02.2008 page 9 IPB80N04S2-H4 Changes Update of side 1 and 10 according to new template Update of SOA diagram, labelling 2008-02-22 ...

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