NTD20P06LG ON Semiconductor, NTD20P06LG Datasheet - Page 3

• Manufacturer Part Number: NTD20P06LG
• Description: MOSFET P-CH 60V 15.5A DPAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTD20P06LG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 15.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Forward Transconductance Gfs (max / Min): 17.5 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 15.5 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.15Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD20P06LG; NTD20P06LGOS

0.45
0.35
0.25
0.15
0.05
0.5
0.4
0.3
0.2
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
40
35
30
25
20
15
10
5
0
0
2
1
0
−50
0
0
Figure 3. On−Resistance versus Drain Current
V
I
V
V
D
V
GS
GS
GS
GS
= −7.5 A
V
V
−25
1
Figure 5. On−Resistance Variation with
GS
= −7 V
= −5 V
GS
= −8 V
Figure 1. On−Region Characteristics
−V
= −5 V
= −9 V
5
= −10 V
DS
T
2
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
−I
3
D
10
, DRAIN CURRENT (A)
and Temperature
25
Temperature
4
T
J
= 125°C
T
50
T
15
5
J
J
= −55°C
= 25°C
TYPICAL PERFORMANCE CURVES
6
75
20
(T
7
J
100
V
V
V
V
= 25°C unless otherwise noted)
V
V
V
GS
GS
GS
GS
GS
GS
GS
8
http://onsemi.com
T
25
= −6 V
= −4 V
= −3 V
= −5.5 V
J
= −3.5 V
= −4.5 V
= −5 V
125
= 25°C
9
10
30
150
3
10000
0.225
0.175
0.125
0.075
0.025
1000
0.25
0.15
0.05
100
0.2
0.1
40
30
20
10
10
0
0
1
5
0
0
Figure 4. On−Resistance versus Drain Current
V
T
Figure 6. Drain−to−Source Leakage Current
GS
J
10
= 25°C
1
= 0 V
−V
3
−V
Figure 2. Transfer Characteristics
15
DS
DS
, GATE−TO−SOURCE VOLTAGE (V)
T
2
, DRAIN−TO−SOURCE VOLTAGE (V)
J
6
T
20
= 25°C
−I
J
= −55°C
D
, DRAIN CURRENT (A)
and Gate Voltage
3
25
versus Voltage
V
9
V
GS
GS
T
T
J
J
30
= −5 V
4
= −10 V
= 150°C
= 125°C
12
35
5
15
40
6
45
T
18
J
VDS w 10 V
7
= 125°C
50
21
8
55 60
24
9