IPS12CN10L G Infineon Technologies, IPS12CN10L G Datasheet - Page 5
![MOSFET N-CH 100V 69A TO251-3-11](/photos/5/60/56062/dpak_369d___01_sml.jpg)
IPS12CN10L G
Manufacturer Part Number
IPS12CN10L G
Description
MOSFET N-CH 100V 69A TO251-3-11
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Specifications of IPS12CN10L G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.8 mOhm @ 69A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
2.4V @ 83µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
9.9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Configuration
Single
Resistance Drain-source Rds (on)
0.0118 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
69 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000311530
Rev. 1.02
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
250
200
150
100
150
100
50
50
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
1
D
|R
2
DS(on)max
4.5 V
6 V
5.5 V
5 V
2
175 °C
10 V
V
V
GS
DS
6.5 V
[V]
[V]
8 V
25 °C
3
7 V
4
4
page 5
5
6
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
160
140
120
100
30
25
20
15
10
80
60
40
20
D
=f(I
5
0
0
); T
0
0
4.5 V
D
j
); T
=25 °C
GS
20
j
=25 °C
20
5 V
40
40
60
I
I
D
D
[A]
[A]
5.5 V
80
60
IPS12CN10L G
IPP12CN10L G
100
80
10 V
6 V
120
2008-07-15
100
140