IPI80N08S2-07 Infineon Technologies, IPI80N08S2-07 Datasheet - Page 3
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IPI80N08S2-07
Manufacturer Part Number
IPI80N08S2-07
Description
MOSFET N-CH 75V 80A TO262-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPI80N08S2-07.pdf
(8 pages)
Specifications of IPI80N08S2-07
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0071 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219043
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPI80N08S2-07
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
1)
information see Application Note ANPS071E at www.infineon.com/optimos
2)
3)
4)
5)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
See diagram 13.
Qualified at -20V and +20V.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 0.5K/W the chip is able to carry 132A at 25°C. For detailed
V
f =1 MHz
V
I
V
V
T
V
T
V
di
V
di
D
C
j
GS
DD
DD
GS
GS
R
R
=80 A, R
=25 °C
F
F
page 3
=25 °C
=40 V, I
=40 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=40 V, V
=60 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
F
G
2
DS
=80 A,
=I
=I
D
=2.2
(one layer, 70 µm thick) copper area for drain
GS
=80 A,
=25 V,
S
S
=10 V,
,
,
IPP80N08S2-07, IPI80N08S2-07
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
4700
1260
typ.
580
144
110
470
5.4
0.9
26
50
61
30
25
69
-
-
IPB80N08S2-07
max.
116
180
140
590
320
1.3
37
80
-
-
-
-
-
-
-
-
2006-03-03
Unit
pF
ns
nC
V
A
V
ns
nC