IPD320N20N3 G Infineon Technologies, IPD320N20N3 G Datasheet
IPD320N20N3 G
Specifications of IPD320N20N3 G
IPD320N20N3 GTR
Related parts for IPD320N20N3 G
IPD320N20N3 G Summary of contents
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... TM 3 Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPD320N20N3 G Value Unit ...
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... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPD320N20N3 G Values Unit min. typ. max. ...
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... Parameter Dynamic characteristics Reverse Diode Symbol Conditions 17A IPD320N20N3 G Values Unit min. typ. max. ...
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... Power dissipation P T 160 140 120 100 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPD320N20N3 G 50 100 150 200 T [° [ ...
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... Typ. output characteristics [ Typ. transfer characteristics [ Typ. drain-source on resistance Typ. forward transconductance IPD320N20N3 [ [ ...
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... Drain-source on-state resistance 100 -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode 120 160 IPD320N20N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...
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... Avalanche characteristics 100 [µ Drain-source breakdown voltage 230 220 210 200 190 180 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPD320N20N3 [nC] gate ate ...
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... PG-TO252-3: Outline IPD320N20N3 G ...
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... IPD320N20N3 G ...