BUZ73 Infineon Technologies, BUZ73 Datasheet - Page 5

• Manufacturer Part Number: BUZ73
• Description: MOSFET N-CH 200V 7A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ73IN; BUZ73X; BUZ73XK; BUZ73XTIN; BUZ73XTIN; SP000011372

Power dissipation
P
P
Safe operating area
I
parameter: D = 0.01 , T
Rev. 2.3
D
tot
I
tot
D
= ƒ ( V
= ƒ ( T
10
10
10
10
45
35
30
25
20
15
10
W
A
-1
5
0
2
1
0
DS
10
0
C
0
)
)
20
40
10
60
1
C
= 25˚C
80
100
10
DC
2
120
t
p = 22.0µs
100 µs
1 ms
10 ms
V
T
˚C
DS
C
V
160
Page 5
Z
Transient thermal impedance
Z
parameter: D = t
Drain current
I
parameter: V
thJC
D
I
th JC
D
= ƒ ( T
K/W
10
10
10
10
10
= ƒ ( t
7.5
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-3
A
1
0
10
C
0
)
-7
p
)
20
single pulse
10
GS
-6
p
≥ 10 V
40
/ T
10
-5
60
10
-4
80
10
100
-3
10
120
-2
D = 0.50
2009-03-25
BUZ 73
10
t
0.20
0.10
0.05
0.02
0.01
p
T
˚C
C
-1
s
10
160
0