IPP70N10SL-16 Infineon Technologies, IPP70N10SL-16 Datasheet - Page 2

• Manufacturer Part Number: IPP70N10SL-16
• Description: MOSFET N-CH 100V 70A TO220-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of IPP70N10SL-16

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2V @ 2mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 4540pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000225708

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
= 2 mA
=100V, V
=100V, V
=0V, I
=20V, V
=4.5V, I
=10V, I
2
cooling area
D
D
=2mA
D
DS
=50A
GS
GS
=50A
=0V
=0V, T
=0V, T
1)
j
j
=25°C
=150°C
GS
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
IPP70N10SL-16, IPB70N10SL-16
min.
min.
100
1.2
-
-
-
-
-
-
-
-
-
Values
Values
typ.
typ.
1.6
0.1
10
14
10
-
-
-
-
-
-
IPI70N10SL-16
max.
max.
100
62.5
100
0.6
25
16
62
40
2006-02-14
1
2
-
Unit
V
µA
nA
mΩ
Unit
K/W