IPB100N08S2-07 Infineon Technologies, IPB100N08S2-07 Datasheet - Page 5
![MOSFET N-CH 75V 100A TO263-3](/photos/16/8/160871/to263_sml.jpg)
IPB100N08S2-07
Manufacturer Part Number
IPB100N08S2-07
Description
MOSFET N-CH 75V 100A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB100N08S2-07.pdf
(8 pages)
Specifications of IPB100N08S2-07
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.8 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
4700pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.1 m Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219044
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB100N08S2-07
Manufacturer:
INFINEON
Quantity:
15 000
Company:
Part Number:
IPB100N08S2-07
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
300
250
200
150
100
200
180
160
140
120
100
50
80
60
40
20
0
0
DS
GS
0
2
); T
); V
10 V
GS
j
j
DS
= 25 °C
3
= 6V
2
175 °C
7 V
4
25 °C
4
V
V
-55 °C
DS
GS
5
6 V
5.5 V
5 V
4.5 V
[V]
[V]
6
6
8
7
page 5
10
8
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
150
125
100
18
16
14
12
10
75
50
25
8
6
4
0
= (I
D
); T
0
0
D
); T
j
= 25°C
fs
GS
IPP100N08S2-07, IPI100N08S2-07
20
j
5 V
= 25 °C
50
40
I
I
D
D
100
60
[A]
[A]
5.5 V
IPB100N08S2-07
80
150
100
2006-03-03
6 V
10 V
8 V
120
200