SPA04N50C3 Infineon Technologies, SPA04N50C3 Datasheet - Page 3

• Manufacturer Part Number: SPA04N50C3
• Description: MOSFET N-CH 560V 4.5A TO220FP
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA04N50C3

• Package / Case: TO-220FP
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 3.9V @ 200µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 25V
• Power - Max: 31W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.95 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 31000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216298; SPA04N50C3IN; SPA04N50C3X; SPA04N50C3XK; SPA04N50C3XTIN; SPA04N50C3XTIN

Rev. 2.9
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate to source charge
Gate to drain charge
7 I
Identical low-side and high-side switch.
SD
<=I
D
, di/dt<=400A/us, V
DClink
=400V, V
g
C
C
C
t
t
t
t
Q
Q
d(on)
r
d(off)
f
fs
iss
oss
rss
gs
gd
peak
<V
P
BR, DSS
V
V
f
V
V
V
R
V
V
V
V
DS
GS
GS
DS
DD
G
DD
DD
GS
DD
≥
, T
Ω
j
V
<T
DS
V
j,max
GS
C
.
C
oss
oss
V
V
DS
DS
E
AR
f
2010-12-21
3