IPB100N10S3-05 Infineon Technologies, IPB100N10S3-05 Datasheet - Page 5

• Manufacturer Part Number: IPB100N10S3-05
• Description: MOSFET N-CH 100V 100A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N10S3-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 240µA
• Gate Charge (qg) @ Vgs: 176nC @ 10V
• Input Capacitance (ciss) @ Vds: 11570pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0048 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N10S3-05; IPB100N10S3-05TR; SP000261243

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
400
360
320
280
240
200
160
120
350
300
250
200
150
100
80
40
50
0
0
DS
GS
0
3
); T
); V
GS
j
j
DS
= 25 °C; SMD
= 6V
1
10 V
4
175 °C
7 V
2
25 °C
V
V
DS
GS
5
-55 °C
[V]
[V]
3
6
4
5 V
6 V
5.5 V
6.5 V
page 5
7
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
9
8
7
6
5
4
3
8.5
7.5
6.5
5.5
4.5
3.5
2.5
= f(I
= f(T
0
-60
D
20
j
); T
); I
GS
IPI100N10S3-05, IPP100N10S3-05
-20
D
j
40
= 25 °C; SMD
= 100 A; V
60
20
80
I
T
D
GS
j
[A]
60
[°C]
100 120 140 160 180
= 10 V; SMD
IPB100N10S3-05
5.5 V
100
140
2008-02-11
10 V
6.5 V
7 V
6 V
180