IPB031NE7N3 G Infineon Technologies, IPB031NE7N3 G Datasheet - Page 7

• Manufacturer Part Number: IPB031NE7N3 G
• Description: MOSFET N-CH 75V 100A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB031NE7N3 G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 3.8V @ 155µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 8130pF @ 37.5V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Gate Charge Qg: 88 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.1 mOhms
• Forward Transconductance Gfs (max / Min): 150 S, 75 S
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB031NE7N3GXT

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
1000
100
t
10
90
80
70
60
1
0.1
-60
R
T
T
I
-20
1
20
10
t
T
AV
j
60
[°C]
[µs]
100
100
1000
140
10000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
12
10
V
Q
8
6
4
2
0
0
V
I
Q
20
40
Q
Q
gate
g
Q
[nC]
Q
60
IPB031NE7N3 G
80
Q
g ate
100