IPB100N04S2L-03 Infineon Technologies, IPB100N04S2L-03 Datasheet
IPB100N04S2L-03
Specifications of IPB100N04S2L-03
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IPB100N04S2L-03 Summary of contents
Page 1
... Ordering Code SP0002-19065 SP0002-19062 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =80A =25 °C tot stg page 1 IPB100N04S2L-03 IPP100N04S2L-03 DS (SMD version) DS(on),max D PG-TO220-3-1 Marking PN04L03 PN04L03 Value =10 V 100 100 400 810 ±20 300 -55 ... +175 40 V 3.0 m 100 A Unit °C 2006-03-02 ...
Page 2
... GS(th = DSS T =25 ° = =125 ° = GSS =4 = DS(on) SMD version SMD version =80 A, DS( SMD version page 2 IPB100N04S2L-03 IPP100N04S2L-03 Values min. typ. max 0 1.2 1 100 = 100 - 3.2 4.4 - 2.9 4.1 - 2.4 3.3 - 2.1 Unit K µ mΩ 3 ...
Page 3
... =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ 0.5K/W the chip is able to carry 220A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N04S2L-03 IPP100N04S2L-03 Values min. typ. max. - 6000 = 2200 - 700 - = 163 - 3 0 150 Unit ...
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... V DS Rev. 1.0 2 Drain current 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB100N04S2L-03 IPP100N04S2L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2006-03-02 ...
Page 5
... V GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 3 2 [V] 8 Typ. Forward transconductance parameter: g 300 250 200 150 100 50 25 °C -55 ° [V] page 5 IPB100N04S2L-03 IPP100N04S2L- ° 3 [ 25° 100 150 100 120 200 2006-03-02 ...
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... Typ. gate threshold voltage V = f(T GS(th) parameter: I 2.5 2 1.5 1 0.5 0 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss Coss 2 10 Crss [V] page 6 IPB100N04S2L-03 IPP100N04S2L- 1250µA 250µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1 ...
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... T [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate 125 175 0 16 Gate charge waveforms 100 140 180 page 7 IPB100N04S2L-03 IPP100N04S2L- pulsed 120 Q [nC] gate gate gate 2006-03-02 32V 160 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPB100N04S2L-03 IPP100N04S2L-03 2006-03-02 ...