SPB80P06P G Infineon Technologies, SPB80P06P G Datasheet - Page 5

• Manufacturer Part Number: SPB80P06P G
• Description: MOSFET P-CH 60V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB80P06P G

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 64A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 5.5mA
• Gate Charge (qg) @ Vgs: 173nC @ 10V
• Input Capacitance (ciss) @ Vds: 5033pF @ 25V
• Power - Max: 340W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.023 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 340000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package: D2PAK (TO-263)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 23.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000096088; SPB80P06P G; SPB80P06PGINTR; SPB80P06PGXT

Power dissipation
P
Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
Rev 1.4
-10
-10
-10
-10
W
360
280
240
200
160
120
A
= f ( T
80
40
0
3
2
1
0
-10
0
SPP80P06P
SPP80P06P
DS
-1
C
20
)
)
40
60
-10
0
80 100 120 140 160
C
= 25 °C
-10
1
DC
V
T
V
°C
t p = 14.0µs
C
DS
100 µs
1 ms
10 ms
190
-10
Page 5
2
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter : D = t
D
thJC
K/W
= f ( T
10
10
10
10
10
10
10
A
-90
-70
-60
-50
-40
-30
-20
-10
-1
-2
-3
-4
-5
0
= f ( t
1
0
10
0
SPP80P06P
SPP80P06P
C
-7
)
20
p
10
single pulse
)
GS
-6
40
³
10
60
p
10 V
-5
/ T
80 100 120 140 160
10
-4
10
SPP80P06P G
SPB80P06P G
-3
10
2009-11-19
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
°C
p
C
190
10
0