IPA50R199CP Infineon Technologies, IPA50R199CP Datasheet - Page 3
IPA50R199CP
Manufacturer Part Number
IPA50R199CP
Description
MOSFET N-CH 550V 17A TO220-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPA50R199CP
Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
3.5V @ 660µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 100V
Power - Max
139W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.199 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
139000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
17A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
199mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000236081
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA50R199CP
Manufacturer:
INFINEON
Quantity:
12 000
Part Number:
IPA50R199CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000