SPP80P06P G Infineon Technologies, SPP80P06P G Datasheet - Page 4
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SPP80P06P G
Manufacturer Part Number
SPP80P06P G
Description
MOSFET P-CH 60V 80A TO-220
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.SPP80P06P_G.pdf
(11 pages)
Specifications of SPP80P06P G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 64A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 5.5mA
Gate Charge (qg) @ Vgs
173nC @ 10V
Input Capacitance (ciss) @ Vds
5033pF @ 25V
Power - Max
340W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000441774
Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
DD
DD
DD
DD
C
C
GS
R
R
Rev 1.4
= 25 °C
= 25 °C
= -30 V, I
= -30 V, I
= -48 V, I
= -48 V, I
= -48 V, I
= -48 V , I
= 0 V, I
F
F
F =
= -80 A
= I
D
D
D
D
l
S
S
= -80 A
= -80 A
= -80 A, V
= -80 A
, d i
, d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
= 0 to -10 V
j
= 25 °C, unless otherwise specified
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
rr
gs
gd
g
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
typ.
27.4
115
-6.2
typ.
-1.2
117
420
50
-
-
SPP80P06P G
SPB80P06P G
max.
max.
-320
173
-1.6
175
630
-80
41
75
2009-11-19
-
Unit
nC
V
Unit
A
V
ns
nC