IPB160N04S2-03 Infineon Technologies, IPB160N04S2-03 Datasheet

MOSFET N-CH 40V 160A TO263-7

IPB160N04S2-03

Manufacturer Part Number
IPB160N04S2-03
Description
MOSFET N-CH 40V 160A TO263-7
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB160N04S2-03

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.9 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (7 leads + tab)
Configuration
Single Quad Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.9 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
160 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000218151

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPB160N04S2-03
Manufacturer:
INF
Quantity:
783
Part Number:
IPB160N04S2-03
Manufacturer:
INFINEON
Quantity:
3 550
Part Number:
IPB160N04S2-03
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB160N04S2-03
®
- T Power-Transistor
2)
Package
PG-TO263-7-3
j
=25 °C, unless otherwise specified
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Ordering Code
stg
SP0002-18151
T
T
T
I
T
D
C
C
C
C
=80A
page 1
=25 °C
=100 °C
=25 °C
=25 °C
2)
Product Summary
V
R
I
Marking
P2N0403
D
DS
DS(on),max
-55 ... 175
55/175/56
Value
160
160
640
810
±20
300
PG-TO263-7-3
IPB160N04S2-03
160
2.9
40
2006-03-02
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPB160N04S2-03

IPB160N04S2-03 Summary of contents

Page 1

... Rev. 1.0 Product Summary DS(on),max I D Ordering Code Marking SP0002-18151 P2N0403 Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =80A =25 °C tot stg page 1 IPB160N04S2- 2.9 m 160 A PG-TO263-7-3 Value Unit 160 A 160 640 810 mJ ±20 V 300 W -55 ... 175 °C 55/175/56 2006-03-02 ...

Page 2

... Rev. 1.0 Symbol Conditions R thJC R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =250 µA GS(th = DSS T =25 ° = =125 ° = GSS = = DS(on) SMD version page 2 IPB160N04S2-03 Values min. typ. max 0 2 100 = 100 - 2.4 2.9 Unit K µ 2006-03-02 ...

Page 3

... GS I =160 d(off = =160 plateau =25 ° S,pulse = =25 ° 0.5K/W the chip is able to carry 235A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB160N04S2-03 Values Unit min. typ. max. - 5300 - pF - 2150 - - 580 - - 123 170 - 5 160 A - ...

Page 4

... V DS Rev. 1.0 2 Drain current I =f 160 140 120 100 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µs 0 0.01 0.001 10 100 10 [V] page 4 IPB160N04S2-03 ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p ...

Page 5

... V GS Rev. 1.0 6 Typ. drain-source on resistance R =f(I DS(on) parameter 6. 5. [V] 8 Typ. forward transconductance g =f 300 250 200 150 100 50 25° [V] page 5 IPB160N04S2- =25 ° 5.5V 6.0V 7. [A] D =25 ° 160 240 I [A] D 10.0V 80 100 320 2006-03-02 ...

Page 6

... Typ. gate threshold voltage V =f(T GS(th) parameter 3.5 3 2.5 2 1.5 100 140 180 12 Typ. Forward characteristics of reverse diode I =f parameter: T 1000 Ciss Coss 100 Crss [V] page 6 IPB160N04S2- 1000µA 250µA -60 - 100 T [° °C 175 °C 0.0 0.5 1.0 V [V] SD 140 180 1.5 2006-03-02 ...

Page 7

... T [° Drain-source breakdown voltage V =f BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V =f gate parameter 125 175 0 16 Gate charge waveforms s(th (th) 100 140 180 page 7 IPB160N04S2-03 =160A pulsed 100 Q [nC] gate 2006-03-02 32V 120 Q gate ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPB160N04S2-03 2006-03-02 ...

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