SPA12N50C3 Infineon Technologies, SPA12N50C3 Datasheet - Page 4
![MOSFET N-CH 560V 11.6A TO220FP](/photos/5/53/55314/448-to-220_fullpak_sml.jpg)
SPA12N50C3
Manufacturer Part Number
SPA12N50C3
Description
MOSFET N-CH 560V 11.6A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.SPP12N50C3.pdf
(14 pages)
Specifications of SPA12N50C3
Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
11.6A
Vgs(th) (max) @ Id
3.9V @ 500µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
33W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11.6 A
Power Dissipation
33000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
11.6A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
380mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000216322
SPA12N50C3IN
SPA12N50C3X
SPA12N50C3XK
SPA12N50C3XTIN
SPA12N50C3XTIN
SPA12N50C3IN
SPA12N50C3X
SPA12N50C3XK
SPA12N50C3XTIN
SPA12N50C3XTIN
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPA12N50C3
Manufacturer:
PANASONIC
Quantity:
9 000
Part Number:
SPA12N50C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Rev. 3.1
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
SPP_I
0.015
0.056
0.197
0.216
0.083
0.03
P
tot
(t)
Value
T
j
C
0.056
0.194
0.413
2.522
SPA
0.15
0.03
th1
R
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
T
V
V
di
T
C
j
GS
R
F
=25°C
Page 4
C
=25°C
=400V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
Conditions
th,n
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
,
0.0001878
0.0007106
SPI12N50C3, SPA12N50C3
0.000988
0.002791
0.007285
SPP_I
0.063
E xternal H eatsink
min.
-
-
-
-
-
-
-
Value
Values
0.0001878
0.0007106
1100
0.000988
0.002791
0.007401
typ.
380
5.5
38
1
-
-
0.412
SPP12N50C3
SPA
2009-11-30
max.
11.6 A
34.8
1.2
-
-
-
-
Unit
Ws/K
Unit
V
ns
µC
A
A/µs