IPW50R199CP Infineon Technologies, IPW50R199CP Datasheet

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IPW50R199CP

Manufacturer Part Number
IPW50R199CP
Description
MOSFET N-CH 550V 17A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPW50R199CP

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 9.9A, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
3.5V @ 660µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 100V
Power - Max
139W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.199 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
17 A
Power Dissipation
139000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
17A
Drain Source Voltage Vds
550V
On Resistance Rds(on)
199mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000236096

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPW50R199CP
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPW50R199CP
Manufacturer:
INF
Quantity:
20 000
Company:
Part Number:
IPW50R199CP
Quantity:
80 000
Rev. 2.1
Features
• Lowest figure of merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV
• PWM for ATX, Notebook adapter, PDP and LCD TV
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
IPW50R199CP
TM
Power Transistor
2)
j
Package
PG-TO247
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
5R199P
stg
T
T
T
I
I
V
static
AC (f>1 Hz)
T
M3 and M3.5 screws
D
D
page 1
C
C
C
C
DS
=6.6 A, V
=6.6 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...400 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@T
jmax
-55 ... 150
Value
0.66
436
±20
±30
139
6.6
PG-TO247
17
11
40
50
60
IPW50R199CP
0.199 Ω
550
34
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC
2008-01-21

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IPW50R199CP Summary of contents

Page 1

... C T =100 ° =25 °C D,pulse =6 = 2 2), =0...400 static GS AC (f>1 Hz =25 °C tot stg M3 and M3.5 screws page 1 IPW50R199CP @T 550 DS jmax 0.199 Ω DS(on),max 34 g,typ PG-TO247 Value 436 0.66 6.6 50 ±20 ±30 139 -55 ... 150 Unit V/ °C Ncm 2008-01-21 ...

Page 2

... GS(th =500 DSS T =25 ° =500 =150 ° = GSS = =9 DS(on) T =25 ° = =9 =150 ° MHz, open drain G page 2 IPW50R199CP Value Unit 9 V/ns Values Unit min. typ. max 0.9 K 260 °C 500 - - V 2 µ 100 nA 0.199 Ω - 0.18 - 0.45 - Ω - 2.2 ...

Page 3

... D t =16.4 Ω R d(off =400 plateau =9 =25 ° =400 /dt =100 A/µ rrm =400V, V < <T , identical low and high side switch peak (BR)DSS j jmax oss oss page 3 IPW50R199CP Values min. typ. max. - 1800 - - 160 - - 5 0.9 1.2 - 340 - , * while V is rising from DSS ...

Page 4

... D 0.5 0.2 0 0.05 0.02 0.01 single pulse - Rev. 2.1 2 Safe operating area I =f parameter 100 125 150 175 [° Typ. output characteristics I =f parameter [s] p page 4 IPW50R199CP ); T =25 ° limited by on-state 1 µs resistance 10 µs 100 µ [ =25 ° 2008-01-21 ...

Page 5

... T Rev. 2.1 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 0.9 0.8 5.5 V 0.7 0 0.5 4.5 V 0 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 5 IPW50R199CP ); T =150 ° |>2 DS(on)max j 25 °C 150 ° [ 2008-01-21 ...

Page 6

... Forward characteristics of reverse diode I =f parameter 100 V 400 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 580 560 540 520 500 480 460 440 -60 125 175 [°C] j page 6 IPW50R199CP j 25 °C, 98% 150 °C, 98% 150 °C 25 °C 0.5 1 1 =0. - 100 140 T [° 180 2008-01-21 ...

Page 7

... Typ. capacitances C =f MHz Ciss 3 10 Coss Crss 100 200 V Rev. 2.1 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPW50R199CP ) 100 200 300 400 V [V] DS 500 2008-01-21 ...

Page 8

... Definition of diode switching characteristics Rev. 2.1 page 8 IPW50R199CP 2008-01-21 ...

Page 9

... PG-TO247: Outline Rev. 2.1 page 9 IPW50R199CP 2008-01-21 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 10 IPW50R199CP 2008-01-21 ...

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