IPB025N08N3 G Infineon Technologies, IPB025N08N3 G Datasheet

no-image

IPB025N08N3 G

Manufacturer Part Number
IPB025N08N3 G
Description
MOSFET N-CH 80V 120A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB025N08N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
3.5V @ 270µA
Gate Charge (qg) @ Vgs
206nC @ 10V
Input Capacitance (ciss) @ Vds
14200pF @ 40V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
2mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-263
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0025 Ohms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000311980
Features
Maximum ratings,
Parameter
Type
Package
Marking
3 Power-Transistor
T
R
R
Symbol Conditions
I
I
E
V
P
T T
T
T
T
I
T
R
Product Summary
V
R
I
Value
IPB025N08N3 G
Unit

Related parts for IPB025N08N3 G

IPB025N08N3 G Summary of contents

Page 1

... Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB025N08N3 G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPB025N08N3 G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPB025N08N3 G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 350 300 250 200 150 100 100 T [° Safe operating area [ Drain current 140 120 100 150 200 0 4 Max. transient thermal impedance IPB025N08N3 G 50 100 150 T [° [s] p 200 0 10 ...

Page 5

... Typ. output characteristics 480 440 400 360 320 280 240 200 160 120 [ Typ. transfer characteristics 300 250 200 150 100 [ Typ. drain-source on resistance Typ. forward transconductance 250 200 150 100 IPB025N08N3 100 150 I [ 100 I [A] D 200 150 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB025N08N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB025N08N3 G 50 100 150 Q [nC] gate 200 g ate ...

Page 8

... PG-TO263-3 (D²-Pak) IPB025N08N3 G ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB025N08N3 G ...

Related keywords